HIGH-RESOLUTION DLTS AND ITS APPLICATION TO LATTICE-MISMATCH-INDUCED DEEP LEVELS IN INGAP
文献类型：期刊论文
| 作者 | ZHU QS ; AKASAKI I |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 1992 |
| 卷号 | 7期号:12页码:1441-1445 |
| 关键词 | TRANSIENT SPECTROSCOPY SEMICONDUCTORS |
| ISSN号 | 0268-1242 |
| 通讯作者 | zhu qs acad sinicainst semicondbeijing 100083peoples r china |
| 中文摘要 | a new method of differentiating the deep level transient spectroscopy (dlts) signal is used to increase the resolution of conventional dlts. using this method, more than one single deep level with small differences in activation energy or capture cross section, which are often hard to determine by conventional dlts, can be distinguished. a series of lattice-mismatched inxga1-xp samples are measured by improved dlts to determine accurately the activation energy of a lattice-mismatch-induced deep level. this level cannot be clearly determined using conventional dlts because the two signals partly overlap each other. both the signals are thought to originate from a phosophorus vacancy and lattice-mismatch-induced defect. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14127]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHU QS,AKASAKI I. HIGH-RESOLUTION DLTS AND ITS APPLICATION TO LATTICE-MISMATCH-INDUCED DEEP LEVELS IN INGAP[J]. semiconductor science and technology,1992,7(12):1441-1445. |
| APA | ZHU QS,&AKASAKI I.(1992).HIGH-RESOLUTION DLTS AND ITS APPLICATION TO LATTICE-MISMATCH-INDUCED DEEP LEVELS IN INGAP.semiconductor science and technology,7(12),1441-1445. |
| MLA | ZHU QS,et al."HIGH-RESOLUTION DLTS AND ITS APPLICATION TO LATTICE-MISMATCH-INDUCED DEEP LEVELS IN INGAP".semiconductor science and technology 7.12(1992):1441-1445. |
入库方式： OAI收割
来源：半导体研究所
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