ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE
文献类型：期刊论文
| 作者 | ZHONG ZT ; LUO WZ ; MOU SM ; ZHANG KY ; LI X ; LI CF |
| 刊名 | chinese physics
 |
| 出版日期 | 1992 |
| 卷号 | 12期号:4页码:853-858 |
| 关键词 | SCHOTTKY-BARRIER SODIUM SULFIDE GAAS 100 PASSIVATION MODEL |
| ISSN号 | 0273-429x |
| 通讯作者 | zhong zt acad sinicainst semicondbeijing 100083peoples r china |
| 中文摘要 | microscopic characteristics of the gaas(100) surface treated with p2s5/nh4oh solution has been investigated by using auger-electron spectroscopy (aes) and x-ray photoemission spectroscopy (xps). aes reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and gaas substrate. using xps it is found that both ga2o3 and as2o3 are removed from the gaas surface by the p2s5/nh4oh treatment; instead, gallium sulfide and arsenic sulfide are formed. the passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the gaas surface. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14131]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHONG ZT,LUO WZ,MOU SM,et al. ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE[J]. chinese physics,1992,12(4):853-858. |
| APA | ZHONG ZT,LUO WZ,MOU SM,ZHANG KY,LI X,&LI CF.(1992).ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE.chinese physics,12(4),853-858. |
| MLA | ZHONG ZT,et al."ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE".chinese physics 12.4(1992):853-858. |
入库方式： OAI收割
来源：半导体研究所
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