GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE
文献类型：期刊论文
| 作者 | LU DC ; LIU XL ; WANG D ; LIN LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1992 |
| 卷号 | 124期号:0页码:383-388 |
| 关键词 | GALLIUM ANTIMONIDE OMVPE GAAS1-XSBX MOCVD |
| ISSN号 | 0022-0248 |
| 通讯作者 | lu dc chinese acad sciinst semicondsemicond mat sci labpob 912beijing 100083peoples r china |
| 中文摘要 | gasb layers are grown on gasb substrates; the effects of input partial pressure of trimethylantimony and the v/iii ratio are studied. a model of the movpe phase diagram for the growth of gasb and gaasxsb1-x is developed which assumes thermodynamic equilibrium to be established at the solid-vapor interface. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14135]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LU DC,LIU XL,WANG D,et al. GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE[J]. journal of crystal growth,1992,124(0):383-388. |
| APA | LU DC,LIU XL,WANG D,&LIN LY.(1992).GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE.journal of crystal growth,124(0),383-388. |
| MLA | LU DC,et al."GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE".journal of crystal growth 124.0(1992):383-388. |
入库方式： OAI收割
来源：半导体研究所
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