Analysis of a InGaAs/InP single photon detector at 1550 nm
文献类型:期刊论文
作者 | Zhang, X. M.; Liang, C.; Liu, G.; Fan, D. Y.; Lang, Peilin; Sun, Z. B.; Ma, H. Q.; Zhang, R.; Lei, M. |
刊名 | JOURNAL OF MODERN OPTICS |
出版日期 | 2013 |
卷号 | 60期号:12页码:819613 |
ISSN号 | 0950-0340 |
关键词 | single photon detector Geiger mode dark count rate quantum efficiency |
通讯作者 | Lei, M (reprint author), Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China. |
英文摘要 | A new type of single-photon detector is introduced and its related properties characterized. The single-photon detector operating in the Geiger mode uses a new type of cooling system to moderate temperature, which can make the temperature drop to -65 degrees C. Besides, the single-photon detector adopts a hold-off time modulation feedback control circuit to decrease the afterpulsing effects and the gate pulse is coupled to the avalanche diode through capacitance. In addition, a suitable delay and comparator with latch function circuit are used to detect avalanche signals. Experimental conditions are that the clock frequency is 10 MHz, refrigeration temperature is -65 degrees C, and the width of control pulse is 5 ns. The experimental results indicate that quantum efficiency is about 20.42% and the dark count rate is about 5 x 10(-6) ns(-1) with signal-to-noise ratio 27 dB at the optimum operation point of this detector. The designed single-photon detector achieves a tradeoff between lower dark count rates and high quantum efficiency. |
收录类别 | SCI ; EI |
语种 | 英语 |
公开日期 | 2015-12-29 |
源URL | [http://ir.nssc.ac.cn/handle/122/5070] |
专题 | 国家空间科学中心_空间技术部 |
推荐引用方式 GB/T 7714 | Zhang, X. M.,Liang, C.,Liu, G.,et al. Analysis of a InGaAs/InP single photon detector at 1550 nm[J]. JOURNAL OF MODERN OPTICS,2013,60(12):819613. |
APA | Zhang, X. M..,Liang, C..,Liu, G..,Fan, D. Y..,Lang, Peilin.,...&Lei, M..(2013).Analysis of a InGaAs/InP single photon detector at 1550 nm.JOURNAL OF MODERN OPTICS,60(12),819613. |
MLA | Zhang, X. M.,et al."Analysis of a InGaAs/InP single photon detector at 1550 nm".JOURNAL OF MODERN OPTICS 60.12(2013):819613. |
入库方式: OAI收割
来源:国家空间科学中心
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