Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor
文献类型：会议论文
| 作者 | Zhou, Xingbao; Zhou, Shouli; Wen, Hao; Ren, Hongliang; Huang, Guiyong; Xu, Jun; Wang, Yuhua |
| 出版日期 | 2014 |
| 会议名称 | 9th IEEE Conference on Industrial Electronics and Applications, ICIEA 2014 |
| 会议日期 | June 9, 2014 - June 11, 2014 |
| 会议地点 | 188-200 Moganshan Road, Hangzhou, China |
| 页码 | 1730-1732 |
| 英文摘要 | The electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity ΔEC and a minimum base bandgap energy EG among the entire composition range of InxGa1-xAs1-ySby material lattice matched to InP. A low Emitter-Base turn on voltage VBE and a low collector offset voltage VCE, as well as a high current gain cut-off frequency, are achieved. |
| 收录类别 | EI |
| 会议主办者 | Hangzhou M.I.C.E. Association; Hangzhou Tourism Commission; Hangzhou Tourism Promotion Center |
| 会议录 | Proceedings of the 2014 9th IEEE Conference on Industrial Electronics and Applications, ICIEA 2014
 |
| 会议录出版者 | Institute of Electrical and Electronics Engineers Inc. |
| 语种 | 英语 |
| ISBN号 | 9781479943166 |
| 源URL | [http://ir.nssc.ac.cn/handle/122/4353]  |
| 专题 | 国家空间科学中心_空间技术部 |
| 推荐引用方式 GB/T 7714 | Zhou, Xingbao,Zhou, Shouli,Wen, Hao,et al. Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor[C]. 见:9th IEEE Conference on Industrial Electronics and Applications, ICIEA 2014. 188-200 Moganshan Road, Hangzhou, China. June 9, 2014 - June 11, 2014. |
入库方式： OAI收割
来源：国家空间科学中心
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