WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD
文献类型：期刊论文
| 作者 | ZHANG YH ; JIANG DS ; LI F ; ZHOU JM ; MEI XB |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1992 |
| 卷号 | 72期号:7页码:3209-3211 |
| 关键词 | EXCITON STARK LADDER SEMICONDUCTOR SUPERLATTICES ABSORPTION-EDGE BLUE SHIFT QUANTIZATION |
| ISSN号 | 0021-8979 |
| 通讯作者 | zhang yh chinese acad sciinst semicondnatl lab superlattices & microstructbeijing 100083peoples r china |
| 中文摘要 | we have studied the wannier-stark effect in gaas/gaalas short-period superlattices under applied electric field perpendicular to the layers by room- and low-temperature photocurrent measurements. the changes in the transition intensities with biasing are well fitted to a theoretical calculation based on the finite kronig-penney model on which the potential of an applied electric field is superposed. with increasing electric field, the 0h peak grows to a maximum while the -1h and +1h peaks monotonousely decrease. by a comparison of the spectra measured at different temperatures, the two peaks in the room temperature photocurrent spectra at relatively low electric field (1.0 x 10(4) v/cm) are identified to be caused by the wannier localization effect instead of saddle-point excitons. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14167]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHANG YH,JIANG DS,LI F,et al. WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD[J]. journal of applied physics,1992,72(7):3209-3211. |
| APA | ZHANG YH,JIANG DS,LI F,ZHOU JM,&MEI XB.(1992).WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD.journal of applied physics,72(7),3209-3211. |
| MLA | ZHANG YH,et al."WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD".journal of applied physics 72.7(1992):3209-3211. |
入库方式： OAI收割
来源：半导体研究所
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