INDIUM OHMIC CONTACTS TO N-ZNSE
文献类型：期刊论文
| 作者 | WANG YX ; HOLLOWAY PH |
| 刊名 | vacuum
 |
| 出版日期 | 1992 |
| 卷号 | 43期号:11页码:1149-1151 |
| ISSN号 | 0042-207x |
| 通讯作者 | wang yx acad sinicainst semicondbeijing 100083peoples r china |
| 中文摘要 | the reaction between an indium over layer and high purity mbe grown n-znse chlorine doped (2x 10(18) cm-3) epilayers has been investigated using x-ray diffraction, rutherford backscattering spectroscopy, x-ray photoelectron and auger electron spectroscopy, and by electrical function tests (i-v and c-v). good ohmic contacts were formed after annealing at 250 or 300-degrees-c for a few minutes in forming gas. annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. the data show that no compounds were formed at the interface; instead in appeared to diffuse into the znse. high surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in the formation of the contact. these effects must be considered for successful formation of the ohmic contact. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14175]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | WANG YX,HOLLOWAY PH. INDIUM OHMIC CONTACTS TO N-ZNSE[J]. vacuum,1992,43(11):1149-1151. |
| APA | WANG YX,&HOLLOWAY PH.(1992).INDIUM OHMIC CONTACTS TO N-ZNSE.vacuum,43(11),1149-1151. |
| MLA | WANG YX,et al."INDIUM OHMIC CONTACTS TO N-ZNSE".vacuum 43.11(1992):1149-1151. |
入库方式： OAI收割
来源：半导体研究所
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