REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING
文献类型：期刊论文
| 作者 | XIAO GM ; YIN SD ; ZHANG JP ; DONG AH ; ZHU PR ; LIU JR |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1992 |
| 卷号 | 71期号:10页码:4843-4847 |
| ISSN号 | 0021-8979 |
| 关键词 | QUALITY |
| 中文摘要 | molecular beam epitaxy gaas films on si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with si ions at 1.2-2.6 mev to doses in the range 10(15)-10(16) cm-2. subsequent rapid infrared thermal annealing was carried out at 850-degrees-c for 15 s in a flowing n2 atmosphere. crystalline quality was analyzed by using rutherfold backscattering/channeling technique and raman scattering spectrometry. the experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. in the improved layer the defect density was much lower than in the as-grown layer, especially near the interface. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14195]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | XIAO GM,YIN SD,ZHANG JP,et al. REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING[J]. journal of applied physics,1992,71(10):4843-4847. |
| APA | XIAO GM,YIN SD,ZHANG JP,DONG AH,ZHU PR,&LIU JR.(1992).REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING.journal of applied physics,71(10),4843-4847. |
| MLA | XIAO GM,et al."REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING".journal of applied physics 71.10(1992):4843-4847. |
入库方式： OAI收割
来源：半导体研究所
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