INVESTIGATION OF NEGATIVE TRANSIENT CURRENT OF ARGON-IMPLANTED GAAS USING PHOTOINDUCED TRANSIENT-CURRENT SPECTROSCOPY
文献类型：期刊论文
| 作者 | LO VC ; CHAN PW ; XU SD ; WONG SP |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 1992 |
| 卷号 | 7期号:5页码:668-675 |
| 关键词 | SEMI-INSULATING GAAS GALLIUM-ARSENIDE |
| ISSN号 | 0268-1242 |
| 通讯作者 | lo vc hong kong polytechdept appl physkowloonhong kong |
| 中文摘要 | the investigation of deep levels of argon-implanted lec-grown semi-insulating gaas with implantation dosages ranging from 1 x 10(11) to 1 x 10(15) cm-2 has been performed. using a photoinduced transient-current spectroscopy (pitcs) it was demonstrated that, for implantation dosages below 1 x 10(13) cm-2, a negative peak or negative transient current (ntc) was observed in the temperature range from 330 to 350 k. the magnitude of this negative peak increased with dosage up to a level of 1 x 10(12) cm-2, beyond which it decreased with dosage. the dosage dependence of the el3 peak height and the resistance of the specimen have also been investigated. it was observed that the variation of the el3 peak height with dosage was similar to the variation of the magnitude of the negative peak, that is the el3 peak height likewise increased with dosage up to 1 x 10(12) cm-2, and then decreased. the resistance of the original high-resistivity specimen dropped abruptly when the dosage reached 1 x 10(12) cm-2. this critical dosage (1 x 10(12) cm-2) was found to be a threshold for the generation of a highly disordered state. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14197]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LO VC,CHAN PW,XU SD,et al. INVESTIGATION OF NEGATIVE TRANSIENT CURRENT OF ARGON-IMPLANTED GAAS USING PHOTOINDUCED TRANSIENT-CURRENT SPECTROSCOPY[J]. semiconductor science and technology,1992,7(5):668-675. |
| APA | LO VC,CHAN PW,XU SD,&WONG SP.(1992).INVESTIGATION OF NEGATIVE TRANSIENT CURRENT OF ARGON-IMPLANTED GAAS USING PHOTOINDUCED TRANSIENT-CURRENT SPECTROSCOPY.semiconductor science and technology,7(5),668-675. |
| MLA | LO VC,et al."INVESTIGATION OF NEGATIVE TRANSIENT CURRENT OF ARGON-IMPLANTED GAAS USING PHOTOINDUCED TRANSIENT-CURRENT SPECTROSCOPY".semiconductor science and technology 7.5(1992):668-675. |
入库方式： OAI收割
来源：半导体研究所
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