PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS
文献类型：期刊论文
| 作者 | ZHONG XR ; ZHOU BJ ; YAN QM ; CAO FN ; LI CJ ; LIN LY ; MA WJ ; ZHENG Y ; TAO F ; XUE ML |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1992 |
| 卷号 | 119期号:0页码:74-78 |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhong xr chinese acad sciinst semicondsemicond mat sci labpob 912beijing 100083peoples r china |
| 中文摘要 | gaas single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. the impurity striations in gaas grown under high gravity become weak and indistinct with smaller striation spacings. the dislocation density of surcharge-grown gaas increases with increase of centrifugal force. the cathodoluminescence results also show worse perfection in the gaas grown at high gravity than at normal earth gravity. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14201]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHONG XR,ZHOU BJ,YAN QM,et al. PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS[J]. journal of crystal growth,1992,119(0):74-78. |
| APA | ZHONG XR.,ZHOU BJ.,YAN QM.,CAO FN.,LI CJ.,...&XUE ML.(1992).PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS.journal of crystal growth,119(0),74-78. |
| MLA | ZHONG XR,et al."PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS".journal of crystal growth 119.0(1992):74-78. |
入库方式： OAI收割
来源：半导体研究所
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