DELINEATION OF DEFECTS IN SIMOX STRUCTURES USING A CHEMICAL ETCHING TECHNIQUE
文献类型：期刊论文
| 作者 | GILES LF ; NEJIM A ; HEMMENT PLF ; FAN TW |
| 刊名 | vacuum
 |
| 出版日期 | 1992 |
| 卷号 | 43期号:4页码:297-299 |
| 关键词 | IMPLANTATION |
| ISSN号 | 0042-207x |
| 通讯作者 | giles lf univ surreydept electr & elect engnguildford gu2 5xhsurreyengland |
| 中文摘要 | residual defects in the overlayer of fully annealed simox material have been studied by means of a chemical etching technique. the etching procedure has been calibrated and an optimum recipe is reported. observations using optical microscopy and transmission electron microscopy have been used to quantify the defect densities and good agreement between the two techniques has been established, confirming that the optimised chemical etching process can be used with confidence to determine the dislocation density for values < 10(7) cm-2. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14205]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | GILES LF,NEJIM A,HEMMENT PLF,et al. DELINEATION OF DEFECTS IN SIMOX STRUCTURES USING A CHEMICAL ETCHING TECHNIQUE[J]. vacuum,1992,43(4):297-299. |
| APA | GILES LF,NEJIM A,HEMMENT PLF,&FAN TW.(1992).DELINEATION OF DEFECTS IN SIMOX STRUCTURES USING A CHEMICAL ETCHING TECHNIQUE.vacuum,43(4),297-299. |
| MLA | GILES LF,et al."DELINEATION OF DEFECTS IN SIMOX STRUCTURES USING A CHEMICAL ETCHING TECHNIQUE".vacuum 43.4(1992):297-299. |
入库方式： OAI收割
来源：半导体研究所
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