PHOTOLUMINESCENCE STUDIES OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE
文献类型：期刊论文
| 作者 | LI GH ; ZHENG BZ ; HAN HX ; WANG ZP ; ANDERSSON TG ; CHEN ZG |
| 刊名 | physical review b
 |
| 出版日期 | 1992 |
| 卷号 | 45期号:7页码:3489-3493 |
| 关键词 | DEPENDENCE HETEROSTRUCTURES STATES |
| ISSN号 | 0163-1829 |
| 通讯作者 | li gh acad sinicainst semicondnatl lab semicond superlattices & microstructpob 912beijing 100083peoples r china |
| 中文摘要 | the photoluminescence from inxg1-xas/gaas strained quantum wells with thickness from 30 to 160 angstrom have been studied at 77 k under hydrostatic pressure up to 60 kbar. it was found that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband increased with reduced well width, in contrast to the case of gaas/alxga1-xas quantum wells. calculations revealed that the increased barrier height with pressure was the major cause of the change in the pressure coefficients. two peaks related to indirect transitions were observed at pressures higher than 50 kbar. they are attributed to type-i transitions from the lowest conduction-band edge, which are the strain splitted x(xy) valleys, to the heavy-hole subband in the inxga1-xas well. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14219]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LI GH,ZHENG BZ,HAN HX,et al. PHOTOLUMINESCENCE STUDIES OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE[J]. physical review b,1992,45(7):3489-3493. |
| APA | LI GH,ZHENG BZ,HAN HX,WANG ZP,ANDERSSON TG,&CHEN ZG.(1992).PHOTOLUMINESCENCE STUDIES OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE.physical review b,45(7),3489-3493. |
| MLA | LI GH,et al."PHOTOLUMINESCENCE STUDIES OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE".physical review b 45.7(1992):3489-3493. |
入库方式： OAI收割
来源：半导体研究所
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