PHOTOEMISSION-STUDY ON THE SNO2/P A-SICX-H INTERFACE
文献类型：期刊论文
| 作者 | LIAO XB ; KONG GL ; WANG YX ; ZHENG HD ; ZHANG Q |
| 刊名 | journal of non-crystalline solids
 |
| 出版日期 | 1991 |
| 卷号 | 137期号:0页码:1091-1094 |
| 关键词 | TRANSPARENT CONDUCTING OXIDES AMORPHOUS-SILICON HYDROGEN PLASMA SPECTROSCOPY BARRIER FILMS |
| ISSN号 | 0022-3093 |
| 通讯作者 | liao xb chinese acad sciinst semicondpob 912beijing 100083peoples r china |
| 中文摘要 | ultraviolet and x-ray photoemission spectroscopies (ups and xps) have been employed to sno2 and its interface with p-type a-sicx:h. the hei valence band spectra of sno2 show that the valence band maximum (vbm) shifts from 4.7 ev to 3.6 ev below the fermi level (e(f)), and the valence band tail (vbt) extends up to the e(f), as a consequence of h-plasma treatments. the work function difference between sno2 and p a-sicx:h is found to decrease from 0.98 ev to 0.15 ev, owing to the increase of the work function of the treated sno2. the reduction of sno2 to metallic sn is also observed by xps profiling, and it is found that this leads to a wider interfacial region between the treated sno2 and the successive growth of p a-sicx:h. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14233]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LIAO XB,KONG GL,WANG YX,et al. PHOTOEMISSION-STUDY ON THE SNO2/P A-SICX-H INTERFACE[J]. journal of non-crystalline solids,1991,137(0):1091-1094. |
| APA | LIAO XB,KONG GL,WANG YX,ZHENG HD,&ZHANG Q.(1991).PHOTOEMISSION-STUDY ON THE SNO2/P A-SICX-H INTERFACE.journal of non-crystalline solids,137(0),1091-1094. |
| MLA | LIAO XB,et al."PHOTOEMISSION-STUDY ON THE SNO2/P A-SICX-H INTERFACE".journal of non-crystalline solids 137.0(1991):1091-1094. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。