SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON
文献类型：期刊论文
| 作者 | RIZK R ; DEMIERRY P ; SONG C ; BALLUTAUD D ; PAJOT B |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1991 |
| 卷号 | 70期号:7页码:3802-3807 |
| 关键词 | MICROSCOPIC STRUCTURE ACCEPTOR PAIRS DOPED SILICON BORON DEFECT |
| ISSN号 | 0021-8979 |
| 通讯作者 | rizk r cnrslab phys solides bellevue1 pl aristide briandf-92195 meudonfrance |
| 中文摘要 | infrared absorption experiments have been performed on hydrogenated and deuterated bulk boron- and aluminum-doped-si and implanted p, as, and sb donors in silicon. a first evidence of complex formation in bulk p-type si is obtained and the spectra confirm the anomalous 3.3-cm-1 deuterium frequency shift with respect to boron isotopes. the ratio of the d-b-11 and d-b-10 peak areas is found to be the same as that of the two boron isotopes natural abundance. in donor-implanted silicon, a quantitative analysis of the obtained data has allowed a rough estimate of the passivating rate due to diffusing deuterium. while the frequencies of the various vibrational lines are found to be in agreement with those reported in the literature, the data on the broad line at 1660 cm-1 (h) or 1220 cm-1 (d) seem to suggest an assignment of this peak to a complex in the bulk involving some type of defect due to the implantation process. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14253]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | RIZK R,DEMIERRY P,SONG C,et al. SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON[J]. journal of applied physics,1991,70(7):3802-3807. |
| APA | RIZK R,DEMIERRY P,SONG C,BALLUTAUD D,&PAJOT B.(1991).SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON.journal of applied physics,70(7),3802-3807. |
| MLA | RIZK R,et al."SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON".journal of applied physics 70.7(1991):3802-3807. |
入库方式： OAI收割
来源：半导体研究所
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