MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON
文献类型：期刊论文
| 作者 | JIANG WL ; ZHU PR ; DONG AH ; YIN SD |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1991 |
| 卷号 | 70期号:5页码:2610-2613 |
| ISSN号 | 0021-8979 |
| 通讯作者 | jiang wl chinese acad sciinst physbeijingpeoples r china |
| 中文摘要 | a simple method for the analysis of concentration ratios n/si and o/si in silicon nitride and oxide layers on silicon substrate is presented. 1.95-mev proton elastic backscattering was used to determine the composition and density. a comparison with 2.1-mev helium rutherford backscattering measurements is given. results are in good agreement with each other. the method is especially useful to analyze samples of 20 000 angstrom or thicker layers. we conclude that these two techniques are complementary for the measurements of samples with different thickness. a brief discussion has been given on results. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14269]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | JIANG WL,ZHU PR,DONG AH,et al. MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON[J]. journal of applied physics,1991,70(5):2610-2613. |
| APA | JIANG WL,ZHU PR,DONG AH,&YIN SD.(1991).MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON.journal of applied physics,70(5),2610-2613. |
| MLA | JIANG WL,et al."MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON".journal of applied physics 70.5(1991):2610-2613. |
入库方式： OAI收割
来源：半导体研究所
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