ON THE FORMATION OF THE SBGA HETEROANTISITE IN METALORGANIC VAPOR-PHASE EPITAXIAL GAAS-SB
文献类型：期刊论文
| 作者 | YAKIMOVA R ; OMLING P ; YANG BH ; SAMUELSON L ; FORNELL JO ; LEDEBO L |
| 刊名 | applied physics letters
 |
| 出版日期 | 1991 |
| 卷号 | 59期号:11页码:1323-1325 |
| 关键词 | OPTICAL-PROPERTIES DEFECT EL2 IDENTIFICATION CRYSTALS SYSTEM BULK |
| ISSN号 | 0003-6951 |
| 通讯作者 | yakimova r univ lunddept solid state physbox 118s-22100 lundsweden |
| 中文摘要 | metalorganic vapor-phase epitaxial growth of gaas doped with isovalent sb is reported. by increasing the trimethylantimony concentration during growth the total sb concentration was varied between 1 x 10(17)-1 x 10(19) cm-3. a new deep level defect with an activation energy of the thermal emission rates of e(c) - 0.54 ev is observed. the defect concentration increases with increasing as partial pressure and with increasing sb doping. it is also found that the el2 concentration decreases with increasing sb doping. the new energy level is suggested to be the 0/ + transition of the sb(ga) heteroantisite defect. no photocapacitance quenching effect, reflecting a metastable state as seen for el2 (as(ga)), is observed for sb(ga). |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14273]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | YAKIMOVA R,OMLING P,YANG BH,et al. ON THE FORMATION OF THE SBGA HETEROANTISITE IN METALORGANIC VAPOR-PHASE EPITAXIAL GAAS-SB[J]. applied physics letters,1991,59(11):1323-1325. |
| APA | YAKIMOVA R,OMLING P,YANG BH,SAMUELSON L,FORNELL JO,&LEDEBO L.(1991).ON THE FORMATION OF THE SBGA HETEROANTISITE IN METALORGANIC VAPOR-PHASE EPITAXIAL GAAS-SB.applied physics letters,59(11),1323-1325. |
| MLA | YAKIMOVA R,et al."ON THE FORMATION OF THE SBGA HETEROANTISITE IN METALORGANIC VAPOR-PHASE EPITAXIAL GAAS-SB".applied physics letters 59.11(1991):1323-1325. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。