ELECTRONIC-STRUCTURES OF QUANTUM WIRES FORMED BY LATERAL STRAIN
文献类型：期刊论文
| 作者 | XIA JB |
| 刊名 | physical review b
 |
| 出版日期 | 1991 |
| 卷号 | 44期号:7页码:3211-3217 |
| ISSN号 | 0163-1829 |
| 通讯作者 | xia jb china ctr adv sci & technolworld labpob 8730beijing 100080peoples r china |
| 中文摘要 | the electronic structures of quantum wires formed by lateral strain are studied in the framework of the effective-mass envelope-function method. the hole energy levels, wave functions, and optical transition matrix elements are calculated for the real quantum-wire structure, and the results are compared with experiment. it is found that one-dimensional confinement effects exist for both electronic and hole states related to the n (001) = 1 state. the lateral strained confinement causes luminescence-peak redshifts and polarization anisotropy, and the anisotropy is more noticeable than that in the unstrained case. the variation of hole energy levels with well widths in the [110] and [001] directions and wave vector along the [110bar] direction are also obtained. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14275]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | XIA JB. ELECTRONIC-STRUCTURES OF QUANTUM WIRES FORMED BY LATERAL STRAIN[J]. physical review b,1991,44(7):3211-3217. |
| APA | XIA JB.(1991).ELECTRONIC-STRUCTURES OF QUANTUM WIRES FORMED BY LATERAL STRAIN.physical review b,44(7),3211-3217. |
| MLA | XIA JB."ELECTRONIC-STRUCTURES OF QUANTUM WIRES FORMED BY LATERAL STRAIN".physical review b 44.7(1991):3211-3217. |
入库方式： OAI收割
来源：半导体研究所
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