TRANSMISSION ELECTRON-MICROSCOPY STUDY OF N+-IMPLANTED SILICON ON INSULATOR BY ENERGY-FILTERED IMAGING
文献类型：期刊论文
| 作者 | DUAN XF ; DU AY ; CHU YM |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1991 |
| 卷号 | 70期号:3页码:1850-1852 |
| 关键词 | ON-INSULATOR NITROGEN SPECTROSCOPY LAYERS |
| ISSN号 | 0021-8979 |
| 通讯作者 | duan xf acad sinicabeijing lab electron microscopypob 2724beijing 100080peoples r china |
| 中文摘要 | we report on the first study of n+ -implanted silicon on insulator by energy-filtered imaging using an opton electron microscope cem 902 equipped castaing-henry electron optical system as a spectrometer. the inelastic images, energy window set at delta-e = 16 ev and delta-e = 25 ev according to plasmon energy loss of crystal si and of silicon nitride respectively, give much structure information. the interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14279]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | DUAN XF,DU AY,CHU YM. TRANSMISSION ELECTRON-MICROSCOPY STUDY OF N+-IMPLANTED SILICON ON INSULATOR BY ENERGY-FILTERED IMAGING[J]. journal of applied physics,1991,70(3):1850-1852. |
| APA | DUAN XF,DU AY,&CHU YM.(1991).TRANSMISSION ELECTRON-MICROSCOPY STUDY OF N+-IMPLANTED SILICON ON INSULATOR BY ENERGY-FILTERED IMAGING.journal of applied physics,70(3),1850-1852. |
| MLA | DUAN XF,et al."TRANSMISSION ELECTRON-MICROSCOPY STUDY OF N+-IMPLANTED SILICON ON INSULATOR BY ENERGY-FILTERED IMAGING".journal of applied physics 70.3(1991):1850-1852. |
入库方式： OAI收割
来源：半导体研究所
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