LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES
文献类型：期刊论文
| 作者 | GONG XY ; YANG BH ; MA YD ; GAO FS ; YU Y ; HAN WJ ; LUI XF ; XI JY ; WANG ZG ; LIN LY |
| 刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 1991 |
| 卷号 | 30期号:7页码:1343-1347 |
| 关键词 | ROOM-TEMPERATURE OPERATION ALLOY COMPOSITION WAVELENGTH RANGE LATTICE-CONSTANT LASERS GASB GAINASSB BANDGAP |
| ISSN号 | 0021-4922 |
| 通讯作者 | gong xy shizuoka univelectr res instjohoku 3-5-1hamamatsushizuoka 432japan |
| 中文摘要 | the gainassb/algaassb/gasb heterostructures were grown by the liquid phase epitaxy (lpe) technique. the materials were characterized by means of optical microscopy, electroprobe microanalysis (epma), double-crystal x-ray diffraction, capacitance-voltage (c-v) and van der pauw measurments, infrared absorption spectra, photoluminescence and laser raman scattering. the results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the gainassb/algaassb dh structures. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14283]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | GONG XY,YANG BH,MA YD,et al. LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,1991,30(7):1343-1347. |
| APA | GONG XY.,YANG BH.,MA YD.,GAO FS.,YU Y.,...&LIN LY.(1991).LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES.japanese journal of applied physics part 1-regular papers short notes & review papers,30(7),1343-1347. |
| MLA | GONG XY,et al."LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES".japanese journal of applied physics part 1-regular papers short notes & review papers 30.7(1991):1343-1347. |
入库方式： OAI收割
来源：半导体研究所
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