ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT
文献类型：期刊论文
| 作者 | LI JM |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1991 |
| 卷号 | 70期号:1页码:511-513 |
| 关键词 | CZOCHRALSKI-GROWN SILICON MICRODEFECTS DISLOCATIONS BEHAVIOR WAFERS |
| ISSN号 | 0021-8979 |
| 通讯作者 | li jm chinese acad sciinst semicondbeijing 100083peoples r china |
| 中文摘要 | the influence of oxygen defects on the resistivity and mobility of silicon wafers is discussed. grinding processes were performed on the surfaces of samples in order to obtain the information on interior defects of the samples. spreading resistivity and hall measurements prove that sio(x) complexes alone result in resistivity increase and mobility decrease. deep level transient spectroscopy experiments prove that sio(x) complexes alone are electrically active. a mechanism of carrier scattering by electrically active sio(x) complex is proposed to explain the changes of resistivity and mobility. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14287]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LI JM. ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT[J]. journal of applied physics,1991,70(1):511-513. |
| APA | LI JM.(1991).ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT.journal of applied physics,70(1),511-513. |
| MLA | LI JM."ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT".journal of applied physics 70.1(1991):511-513. |
入库方式： OAI收割
来源：半导体研究所
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