CERIUM SILICIDE FORMATION IN THIN CE SI MULTILAYER FILMS
文献类型：期刊论文
| 作者 | HSU CC ; HO J ; QIAN JJ ; WANG YT |
| 刊名 | journal of vacuum science & technology a-vacuum surfaces and films
 |
| 出版日期 | 1991 |
| 卷号 | 9期号:3页码:998-1001 |
| 关键词 | METAL-SEMICONDUCTOR INTERFACE SI(111) LA |
| ISSN号 | 0734-2101 |
| 通讯作者 | hsu cc chinese acad sciinst semicondpob 912beijingpeoples r china |
| 中文摘要 | alternating layers of si(200 angstrom thick) and ce(200 angstrom thick) up to 26 layers altogether were deposited by electron evaporation under ultrahigh vacuum conditions on si(100) substrate held at 150-degrees-c. isothermal, rapid thermal annealing has been used to react these ce-si multilayer films. a variety of analytical techniques has been used to study these multilayer films after annealing, and among these are auger electron spectroscopy, rutherford backscattering, x-ray diffraction, and high resolution transmission electron microscopy. intermixing of these thin ce-si multilayer films has occurred at temperatures as low as 150-degrees-c for 2 h, when annealed. increasing the annealing temperature from 150 to 400-degrees-c for 1 h, cesi2 forms gradually and the completion of reaction occurs at approximately 300-400-degrees-c. during the formation of cesi2 from 150-400-degrees-c, there is some evidence for small grains in the selected area diffraction patterns, indicating that cesi2 crystallites were present in some regions. however, we have no conclusive evidence for the formation of epitaxial cesi2 layers, only polycrystals were formed when reacted in the solid phase even after rapid thermal anneal at 900-degrees-c for 10 s. the formation mechanism has also been discussed in combining the results of the la-si system. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14293]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | HSU CC,HO J,QIAN JJ,et al. CERIUM SILICIDE FORMATION IN THIN CE SI MULTILAYER FILMS[J]. journal of vacuum science & technology a-vacuum surfaces and films,1991,9(3):998-1001. |
| APA | HSU CC,HO J,QIAN JJ,&WANG YT.(1991).CERIUM SILICIDE FORMATION IN THIN CE SI MULTILAYER FILMS.journal of vacuum science & technology a-vacuum surfaces and films,9(3),998-1001. |
| MLA | HSU CC,et al."CERIUM SILICIDE FORMATION IN THIN CE SI MULTILAYER FILMS".journal of vacuum science & technology a-vacuum surfaces and films 9.3(1991):998-1001. |
入库方式： OAI收割
来源：半导体研究所
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