SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD
文献类型：期刊论文
| 作者 | LI MF ; ZHAO XS ; GU ZQ ; CHEN JX ; LI YJ ; WANG JQ |
| 刊名 | physical review b
 |
| 出版日期 | 1991 |
| 卷号 | 43期号:17页码:14040-14046 |
| 关键词 | SILICON SEMICONDUCTORS CAPTURE CENTERS ELECTRONS EMISSION |
| ISSN号 | 1098-0121 |
| 通讯作者 | li mf univ sci & technol chinagrad schbeijingpeoples r china |
| 中文摘要 | the shear-deformation-potential constant xi-u of the conduction-band minima of si has been measured by a method which we called deep-level capacitance transient under uniaxial stress. the uniaxial-stress (f) dependence of the electron emission rate e(n) from deep levels to the split conduction-band minima of si has been analyzed. theoretical curves are in good agreement with experimental data for the s0 and s+ deep levels in si. the values of xi-u obtained by the method are 11.1 +/- 0.3 ev at 148.9 k and 11.3 +/- 0.3 ev at 223.6 k. the analysis and the xi-u values obtained are also valuable for symmetry determination of deep electron traps in si. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14295]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LI MF,ZHAO XS,GU ZQ,et al. SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD[J]. physical review b,1991,43(17):14040-14046. |
| APA | LI MF,ZHAO XS,GU ZQ,CHEN JX,LI YJ,&WANG JQ.(1991).SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD.physical review b,43(17),14040-14046. |
| MLA | LI MF,et al."SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD".physical review b 43.17(1991):14040-14046. |
入库方式： OAI收割
来源：半导体研究所
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