Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals
文献类型：期刊论文
| 作者 | Chen QS(陈启生) ; Yan JY(颜君毅); Prasad V
|
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2007 |
| 卷号 | 303期号:1页码:357-361 |
| 通讯作者邮箱 | qschen@imech.ac.cn |
| 关键词 | fluid flows growth models growth from vapor single-crystal growth semiconducting silicon compounds |
| ISSN号 | 0022-0248 |
| 产权排序 | Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China; Florida Int Univ, Dept Mech & Mat Engn, Miami, FL 33174 USA |
| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China. |
| 中文摘要 | A 2-D flow-kinetics model for the PVT growth has been used to describe the phenomena of multi-phase flow, mass transfer and kinetics in the growth process of SiC crystals. The model couples the 2-D gas flow calculations and the growth kinetics at the crystal interface. We calculated the axisymmetric flow field and species concentration field as well as growth rate profile by a finite volume-based code. Species transfer in the cavity is dominated by the diffusion at growth pressures of 8-14 kPa. Supersaturation at the crystal interface is less than 1 Pa at growth pressures of 8-14 kPa. (c) 2006 Elsevier B.V. All rights reserved. |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | PHYSICAL-VAPOR TRANSPORT ; SILICON-CARBIDE CRYSTALS ; SUBLIMATION GROWTH ; BULK CRYSTAL ; HEAT-TRANSFER |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000246386900066 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/58444]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Chen QS,Yan JY,Prasad V. Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals[J]. JOURNAL OF CRYSTAL GROWTH,2007,303(1):357-361. |
| APA | 陈启生,颜君毅,&Prasad V.(2007).Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals.JOURNAL OF CRYSTAL GROWTH,303(1),357-361. |
| MLA | 陈启生,et al."Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals".JOURNAL OF CRYSTAL GROWTH 303.1(2007):357-361. |
入库方式： OAI收割
来源：力学研究所
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