METASTABLE DEFECT IN AMORPHOUS-SILICON SOLAR-CELLS INVESTIGATED BY JUNCTION RECOVERY TECHNIQUE
文献类型：期刊论文
| 作者 | ZHANG Q ; LI FD ; LIAO XB ; KONG GL |
| 刊名 | journal of non-crystalline solids
 |
| 出版日期 | 1991 |
| 卷号 | 128期号:1页码:86-90 |
| 关键词 | LIFETIME |
| ISSN号 | 0022-3093 |
| 通讯作者 | zhang q acad sinicainst semicondpob 912beijing 100083peoples r china |
| 中文摘要 | the effect of metastable defects caused by light soaking and carrier injection on the transport of carriers in undoped a-si:h has been investigated by a junction recovery technique. the experiments show that after light soaking or carrier injection the product of mu-p-tau-p decreases, but no detectable change in the distribution of shallow valence band tail states was found. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14317]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHANG Q,LI FD,LIAO XB,et al. METASTABLE DEFECT IN AMORPHOUS-SILICON SOLAR-CELLS INVESTIGATED BY JUNCTION RECOVERY TECHNIQUE[J]. journal of non-crystalline solids,1991,128(1):86-90. |
| APA | ZHANG Q,LI FD,LIAO XB,&KONG GL.(1991).METASTABLE DEFECT IN AMORPHOUS-SILICON SOLAR-CELLS INVESTIGATED BY JUNCTION RECOVERY TECHNIQUE.journal of non-crystalline solids,128(1),86-90. |
| MLA | ZHANG Q,et al."METASTABLE DEFECT IN AMORPHOUS-SILICON SOLAR-CELLS INVESTIGATED BY JUNCTION RECOVERY TECHNIQUE".journal of non-crystalline solids 128.1(1991):86-90. |
入库方式： OAI收割
来源：半导体研究所
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