PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI
文献类型：期刊论文
| 作者 | ZHONG ZT ; WANG DW ; LIAO XB ; MOU SM ; FAN Y ; LI CF |
| 刊名 | surface science
 |
| 出版日期 | 1991 |
| 卷号 | 243期号:0页码:l41-l45 |
| 关键词 | FILMS MICROSTRUCTURE SI(111) SILICON |
| ISSN号 | 0039-6028 |
| 通讯作者 | zhong zt acad sinicainst semicondbeijing 100083peoples r china |
| 中文摘要 | using photoemission spectroscopy and auger electron spectroscopy, the interfacial formation process and the reactions between al and hydrogenated amorphous si are probed, and annealing behaviors of the al/a-si:h system are investigated as well. it is found that a three-dimensional growth of al metal clusters which includes reacted al and non-reacted metal al occurs at the initial al deposition time, reacted al and si alloyed layers exist in the al/a-si:h interface, and non-reacted al makes layer-by-layer growth forming a metal al layer on the sample surface. the interfacial reactions and element interdiffusion of al/a-si:h are promoted under the vacuum annealing. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14321]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHONG ZT,WANG DW,LIAO XB,et al. PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI[J]. surface science,1991,243(0):l41-l45. |
| APA | ZHONG ZT,WANG DW,LIAO XB,MOU SM,FAN Y,&LI CF.(1991).PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI.surface science,243(0),l41-l45. |
| MLA | ZHONG ZT,et al."PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI".surface science 243.0(1991):l41-l45. |
入库方式： OAI收割
来源：半导体研究所
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