CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
文献类型：期刊论文
| 作者 | DUAN XF ; FUNG KK ; CHU YM ; SHENG C ; ZHOU GL |
| 刊名 | philosophical magazine letters
 |
| 出版日期 | 1991 |
| 卷号 | 63期号:2页码:79-85 |
| 关键词 | MULTILAYERS HETEROSTRUCTURES |
| ISSN号 | 0950-0839 |
| 通讯作者 | duan xf chinese acad scibeijing lab electr microscopypob 2724beijing 100080peoples r china |
| 中文摘要 | side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally ge0.5si0.5(5nm)/si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. the intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. accurate values of elastic strains in the bilayer and of the ge content can be obtained in this way. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14323]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | DUAN XF,FUNG KK,CHU YM,et al. CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY[J]. philosophical magazine letters,1991,63(2):79-85. |
| APA | DUAN XF,FUNG KK,CHU YM,SHENG C,&ZHOU GL.(1991).CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY.philosophical magazine letters,63(2),79-85. |
| MLA | DUAN XF,et al."CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY".philosophical magazine letters 63.2(1991):79-85. |
入库方式： OAI收割
来源：半导体研究所
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