LOCALIZATION EFFECTS, ENERGY RELAXATION, AND ELECTRON AND HOLE DISPERSION IN SELECTIVELY DOPED NORMAL-TYPE ALYGA1-YAS/INXGA1-XAS/GAAS QUANTUM-WELLS
文献类型：期刊论文
| 作者 | BUTOV LV ; KULAKOVSKII VD ; ANDERSSON TG ; CHEN ZG |
| 刊名 | physical review b
 |
| 出版日期 | 1990 |
| 卷号 | 42期号:15页码:9472-9479 |
| ISSN号 | 0163-1829 |
| 通讯作者 | butov lv acad sci ussrinst solid state physchernogolovka 142432ussr |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14345]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | BUTOV LV,KULAKOVSKII VD,ANDERSSON TG,et al. LOCALIZATION EFFECTS, ENERGY RELAXATION, AND ELECTRON AND HOLE DISPERSION IN SELECTIVELY DOPED NORMAL-TYPE ALYGA1-YAS/INXGA1-XAS/GAAS QUANTUM-WELLS[J]. physical review b,1990,42(15):9472-9479. |
| APA | BUTOV LV,KULAKOVSKII VD,ANDERSSON TG,&CHEN ZG.(1990).LOCALIZATION EFFECTS, ENERGY RELAXATION, AND ELECTRON AND HOLE DISPERSION IN SELECTIVELY DOPED NORMAL-TYPE ALYGA1-YAS/INXGA1-XAS/GAAS QUANTUM-WELLS.physical review b,42(15),9472-9479. |
| MLA | BUTOV LV,et al."LOCALIZATION EFFECTS, ENERGY RELAXATION, AND ELECTRON AND HOLE DISPERSION IN SELECTIVELY DOPED NORMAL-TYPE ALYGA1-YAS/INXGA1-XAS/GAAS QUANTUM-WELLS".physical review b 42.15(1990):9472-9479. |
入库方式： OAI收割
来源：半导体研究所
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