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Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate

文献类型：期刊论文

作者Lin, Tao1; Sun, Ruijuan1; Sun, Hang1; Guo, Enmin1; Duan, Yupeng2; Lin, Nan3; Ma, Xiaoyu3; Wang, Yonggang4
刊名materials science in semiconductor processing
出版日期2016-02-01
卷号42页码:283-287
关键词VECSEL MOVPE InGaAs
ISSN号1369-8001
产权排序4
通讯作者lin, t
英文摘要wafers of ingaas-emitting-layer vertical external cavity surface emitting semiconductor laser (vecsel) gain chip and separate active region were grown on semi-insulator gaas substrates by low pressure metal-organic vapor phase epitaxy (movpe). photoluminescence (pl) wavelength of the active region could be adjusted linearly about 1 nm for increasing 1 sccm h-2 flow rate through tmin under ash3 flow rates of 150 sccm. the complicated surface-emitted pl signal of the vecsel gain chip was strongly modulated by interferences within the multilayer and was interpreted by the aberrance of the quantum wells emission with a profile filtered by a micro-cavity resonance in the longitudinal confinement factor. material tests of the vecsel wafer showed the reflectivity of the dbr mirrors was in good agreement with the active region photoluminescence, and the wafer was obtained with high crystal quality. (c) 2015 elsevier ltd. all rights reserved.
WOS标题词science & technology ; technology ; physical sciences
学科主题engineering, electrical & electronic ; materials science, multidisciplinary ; physics, applied ; physics, condensed matter
类目[WOS]engineering, electrical & electronic ; materials science, multidisciplinary ; physics, applied ; physics, condensed matter
研究领域[WOS]engineering ; materials science ; physics
关键词[WOS]semiconductor-lasers ; diodes
收录类别SCI ; EI
语种英语
WOS记录号WOS:000367638400002
源URL[http://ir.opt.ac.cn/handle/181661/27684]  
专题西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位1.Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China
2.NW Univ Xian, Dept Phys, Xian 710069, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
4.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710119, Peoples R China
推荐引用方式
GB/T 7714		 Lin, Tao,Sun, Ruijuan,Sun, Hang,et al. Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate[J]. materials science in semiconductor processing,2016,42:283-287.
APA Lin, Tao.,Sun, Ruijuan.,Sun, Hang.,Guo, Enmin.,Duan, Yupeng.,...&Wang, Yonggang.(2016).Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate.materials science in semiconductor processing,42,283-287.
MLA Lin, Tao,et al."Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate".materials science in semiconductor processing 42(2016):283-287.

入库方式： OAI收割

来源：西安光学精密机械研究所

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