Synchrotron radiation study on structure of Sb 5-doped Si
文献类型：期刊论文
| 作者 | Xiu LS(修立松); Jiang XM(姜晓明) ; Zheng WL(郑文莉); Lu XK(卢学坤); Jiang ZM(蒋最敏); Zhang XJ(张翔九); Wang X(王迅)
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| 刊名 | Chinese Science Bulletin
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| 出版日期 | 1996 |
| 期号 | 7页码:559-562 |
| 关键词 | X-ray diffraction synchrotron radiation applications δ-doped silicon. |
| 通讯作者 | 修立松 |
| 英文摘要 | The impurity-doping in semiconductors is the way to control their electroinc andphoto-electronic properties. The distribution and amount of the dopant affect their physi-cal properties. The development of the molecular beam epitaxy (MBE) and other epitaxytechniques has attracted full atttention ... |
| 公开日期 | 2016-02-25 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/221440]  |
| 专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_人力资源处 |
| 推荐引用方式 GB/T 7714 | Xiu LS,Jiang XM,Zheng WL,et al. Synchrotron radiation study on structure of Sb 5-doped Si[J]. Chinese Science Bulletin,1996(7):559-562. |
| APA | 修立松.,姜晓明.,郑文莉.,卢学坤.,蒋最敏.,...&王迅.(1996).Synchrotron radiation study on structure of Sb 5-doped Si.Chinese Science Bulletin(7),559-562. |
| MLA | 修立松,et al."Synchrotron radiation study on structure of Sb 5-doped Si".Chinese Science Bulletin .7(1996):559-562. |
入库方式： OAI收割
来源：高能物理研究所
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