Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots
文献类型：期刊论文
| 作者 | Chang K ; Xia JB |
| 刊名 | solid state communications
 |
| 出版日期 | 1997 |
| 卷号 | 104期号:6页码:351-354 |
| 关键词 | nanostructures semiconductor electron states SELF-ORGANIZED GROWTH ELECTRONIC-STRUCTURE ENERGY-LEVELS GAAS SEMICONDUCTORS BISTABILITY |
| ISSN号 | 0038-1098 |
| 通讯作者 | chang k chinese acad sciinst semicondnatl lab superlattices & microstructpob 912beijing 100083peoples r china. |
| 中文摘要 | within the framework of the single-band effective-mass envelope-function theory, the effect of electric field on the electronic structures of pyramidal quantum dot is investigated. taking the coulomb interaction between the heavy holes and electron into account, the quantum confined stark shift of the exciton as functions of the strength and direction of applied electric field and the size of the quantum dot are obtained. an interesting asymmetry of stark shifts around the zero field is found. (c) 1997 elsevier science ltd. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15107]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chang K,Xia JB. Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots[J]. solid state communications,1997,104(6):351-354. |
| APA | Chang K,&Xia JB.(1997).Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots.solid state communications,104(6),351-354. |
| MLA | Chang K,et al."Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots".solid state communications 104.6(1997):351-354. |
入库方式： OAI收割
来源：半导体研究所
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