Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy
文献类型：期刊论文
| 作者 | Liu JP ; Liu XF ; Li JP ; Sun DZ ; Kong MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1997 |
| 卷号 | 181期号:4页码:441-445 |
| 关键词 | Si1-xGex alloys low-temperature epitaxy composition dependence growth kinetics GAS-SOURCE MBE SI2H6 SEGREGATION DEPENDENCE KINETICS FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu jp chinese acad sciinst semicondctr mat scipob 912beijing 100083peoples r china. |
| 中文摘要 | ge composition dependence on the ge cell temperature has been studied during the growth of si1-xgex by disilane and solid ge molecular beam epitaxy at a substrate temperature of 500 degrees c. it is found that the composition x increases and then saturates when the ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. the enhanced hydrogen desorption from a ge site alone cannot account for this abnormal composition-variation behavior. we attribute this behavior to the increase of rate constant of h desorption on a si site when the ge cell temperature increases. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15115]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JP,Liu XF,Li JP,et al. Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy[J]. journal of crystal growth,1997,181(4):441-445. |
| APA | Liu JP,Liu XF,Li JP,Sun DZ,&Kong MY.(1997).Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy.journal of crystal growth,181(4),441-445. |
| MLA | Liu JP,et al."Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy".journal of crystal growth 181.4(1997):441-445. |
入库方式： OAI收割
来源：半导体研究所
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