中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photodilatation effect of undoped a-Si:H films

文献类型:期刊论文

作者Kong GL ; Zhang DL ; Yue GZ ; Liao XB
刊名physical review letters
出版日期1997
卷号79期号:21页码:4210-4213
关键词HYDROGENATED AMORPHOUS-SILICON RELAXATION
ISSN号0031-9007
通讯作者kong gl chinese acad sciinst semicondstate lab surface physbeijing 100083peoples r china.
中文摘要a photodilatation effect of undoped a-si:h films has been discovered by a differential dilatometric method. the film thickness has been found to increase instantaneously when the sample is exposed to light. the dilatation weakens with illumination time, following a stretched exponential law, and finally reaches a saturation value. the dilatation disappears when light is off. the results unambiguously show that the whole structure of the film becomes less compact and less stable under light exposure. the metastable change (staebler-wronski effect) could be a redistribution of different configurations after this photodilatation in the a-si:h films.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-11-17
源URL[http://ir.semi.ac.cn/handle/172111/15119]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Kong GL,Zhang DL,Yue GZ,et al. Photodilatation effect of undoped a-Si:H films[J]. physical review letters,1997,79(21):4210-4213.
APA Kong GL,Zhang DL,Yue GZ,&Liao XB.(1997).Photodilatation effect of undoped a-Si:H films.physical review letters,79(21),4210-4213.
MLA Kong GL,et al."Photodilatation effect of undoped a-Si:H films".physical review letters 79.21(1997):4210-4213.

入库方式: OAI收割

来源:半导体研究所

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