Effective-mass theory for InAs/GaAs strained superlattices
文献类型：期刊论文
| 作者 | Li SS ; Xia JB |
| 刊名 | acta physica sinica-overseas edition
 |
| 出版日期 | 1997 |
| 卷号 | 6期号:11页码:848-860 |
| 关键词 | INAS MONOMOLECULAR PLANE MONOLAYER QUANTUM-WELLS MOLECULAR-BEAM EPITAXY ELECTRONIC-STRUCTURE OPTICAL-TRANSITIONS VALENCE BANDS GAAS PHOTOLUMINESCENCE HETEROSTRUCTURES MICROSTRUCTURES |
| ISSN号 | 1004-423x |
| 通讯作者 | li ss acad sinicainst semicondstate key lab superlattices & microstructpob 912beijing 100083peoples r china. |
| 中文摘要 | by using the recently developed exact effective-mass envelope-function theory, the electronic structures of inas/gaas strained superlattices grown on gaas (100) oriented substrates are studied. the electron and hole subband structures, distribution of electrons and holes along the growth direction, optical transition matrix elements, exciton states, and absorption spectra are calculated. in our calculations, the effects due to the different effective masses of electrons and holes in different materials and the strain are included. our theoretical results are in agreement with the available experimental data. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15121]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li SS,Xia JB. Effective-mass theory for InAs/GaAs strained superlattices[J]. acta physica sinica-overseas edition,1997,6(11):848-860. |
| APA | Li SS,&Xia JB.(1997).Effective-mass theory for InAs/GaAs strained superlattices.acta physica sinica-overseas edition,6(11),848-860. |
| MLA | Li SS,et al."Effective-mass theory for InAs/GaAs strained superlattices".acta physica sinica-overseas edition 6.11(1997):848-860. |
入库方式： OAI收割
来源：半导体研究所
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