Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices
文献类型：期刊论文
| 作者 | Pan D ; Zeng YP ; Wu J ; Kong MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1997 |
| 卷号 | 181期号:3页码:297-300 |
| 关键词 | MBE growth strained superlattice EPITAXIAL MULTILAYERS MISFIT DISLOCATIONS LAYERS RELAXATION DEFECTS STRAIN FILMS |
| ISSN号 | 0022-0248 |
| 中文摘要 | with a low strained inxga1-xas/gaas(x similar to 0.01) superlattice (sl) buffer layer, the crystal quality of 50 period relaxed in0.3ga0.7as/gaas strained sls has been greatly improved and over 13 satellite peaks are observed from x-ray double-crystal diffraction, compared with three peaks in the sample without the buffer layer. cross-section transmission electron microscopy reveals that the dislocations due to superlattice strain relaxation are blocked by the sls itself and are buried into the buffer layer. the role of the sl buffer layer lies in that the number of the dislocations is reduced in two ways: (1) the island formation is avoided and (2) the initial nucleation of the threading dislocations is retarded by the high-quality growth of the sl buffer layer. when the dislocation pinning becomes weak as a result of the reduced dislocation density, the sls can effectively move the threading dislocations to the edge of the wafer. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15129]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan D,Zeng YP,Wu J,et al. Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices[J]. journal of crystal growth,1997,181(3):297-300. |
| APA | Pan D,Zeng YP,Wu J,&Kong MY.(1997).Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices.journal of crystal growth,181(3),297-300. |
| MLA | Pan D,et al."Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices".journal of crystal growth 181.3(1997):297-300. |
入库方式： OAI收割
来源：半导体研究所
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