Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures
文献类型：期刊论文
| 作者 | Wang YJ ; Nickel HA ; McCombe BD ; Peeters FM ; Shi JM ; Hai GQ ; Wu XG ; Eustis TJ ; Schaff W |
| 刊名 | physical review letters
 |
| 出版日期 | 1997 |
| 卷号 | 79期号:17页码:3226-3229 |
| ISSN号 | 0031-9007 |
| 关键词 | POLARON-CYCLOTRON-RESONANCE GAAS HETEROSTRUCTURES MODES HETEROJUNCTIONS SUPERLATTICES ELECTRONS MASS |
| 通讯作者 | wang yj florida state univnatl high magnet labtallahasseefl 32306. |
| 中文摘要 | polaron cyclotron resonance (cr) has been studied in three modulation-doped gaas/al0.3ga0.7as multiple quantum well structures in magnetic field up to 30 t. large avoided-level-crossing splittings of the cr near the gaas reststrahlen region, and smaller splittings in the region of the alas-like optical phonons of th algaas barriers, are observed. based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with alas-like interface phonons. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15131]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YJ,Nickel HA,McCombe BD,et al. Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures[J]. physical review letters,1997,79(17):3226-3229. |
| APA | Wang YJ.,Nickel HA.,McCombe BD.,Peeters FM.,Shi JM.,...&Schaff W.(1997).Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures.physical review letters,79(17),3226-3229. |
| MLA | Wang YJ,et al."Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures".physical review letters 79.17(1997):3226-3229. |
入库方式： OAI收割
来源：半导体研究所
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