Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice
文献类型：期刊论文
| 作者 | Pan D ; Zeng YP ; Li JM ; Zhang CH ; Kong MY ; Wang HM ; Wang CY ; Wu J |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1997 |
| 卷号 | 175期号:0页码:760-764 |
| 关键词 | quantum dot intersubband absorption quantum dot infrared photodetector WELL INFRARED PHOTODETECTORS PHONON-SCATTERING LUMINESCENCE GAAS(100) |
| ISSN号 | 0022-0248 |
| 通讯作者 | pan d chinese acad sciinst semicondmat ctrpob 912beijing 100083peoples r china. |
| 中文摘要 | we have grown a high-quality 20 period ingaas/gaas quantum dot superlattice with a standard structure typically used for quantum well infrared photodetector. normal incident absorption was observed around 13-15 mu m. potential applications for this work include high-performance quantum dot infrared detectors. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15147]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan D,Zeng YP,Li JM,et al. Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice[J]. journal of crystal growth,1997,175(0):760-764. |
| APA | Pan D.,Zeng YP.,Li JM.,Zhang CH.,Kong MY.,...&Wu J.(1997).Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice.journal of crystal growth,175(0),760-764. |
| MLA | Pan D,et al."Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice".journal of crystal growth 175.0(1997):760-764. |
入库方式： OAI收割
来源：半导体研究所
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