808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice
文献类型：期刊论文
| 作者 | Zhu DH ; Wang ZG ; Liang JB ; Xu B ; Zhu ZP ; Zhang J ; Gong Q ; Li SY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1997 |
| 卷号 | 175期号:0页码:1004-1008 |
| 关键词 | high-power semiconductor laser MBE quantum well MOLECULAR-BEAM EPITAXY QUANTUM-WELL LASERS BERYLLIUM DIODES MIGRATION OPERATION MIRRORS |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhu dh chinese acad sciinst semicondlab semicond mat scipob 912beijing 100083peoples r china. |
| 中文摘要 | 808 nm high-power laser diodes are gown by mbe. in the laser structure, the combination of si-doped grin (graded-index) region adjacent to n-algaas cladding layer with reduced be doping concentration near the active region has been used to diminish be diffusion and oxygen incorporation. as compared with the laser structure which has undoped grin region and uniform doping concentration for si and be, respectively, in the cladding layers, the slope efficiency has increased by about 8%. typical threshold current density of 300 a/cm(2) and the minimum threshold current density of 220 a/cm(2) for lasers with 500 mu m cavity length are obtained. a high slope efficiency of 1.3 w/a for coated lasers with 1000 mu m cavity length is also demonstrated, recorded cw output power at room temperature has reached 2.3 w. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15149]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu DH,Wang ZG,Liang JB,et al. 808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice[J]. journal of crystal growth,1997,175(0):1004-1008. |
| APA | Zhu DH.,Wang ZG.,Liang JB.,Xu B.,Zhu ZP.,...&Li SY.(1997).808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice.journal of crystal growth,175(0),1004-1008. |
| MLA | Zhu DH,et al."808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice".journal of crystal growth 175.0(1997):1004-1008. |
入库方式： OAI收割
来源：半导体研究所
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