GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N configuration
文献类型：期刊论文
| 作者 | Wang XL ; Sun DZ ; Kong MY ; Hou X ; Zeng YP |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1997 |
| 卷号 | 175期号:0页码:1254-1258 |
| 关键词 | quantum wells molecular beam epitaxy InGaAs/InP optical properties QUANTUM-WELL STRUCTURES MOLECULAR-BEAM EPITAXY ROOM-TEMPERATURE MODULATION EXCITONS LASERS SHIFT |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang xl chinese acad sciinst semicondpob 912beijing 100083peoples r china. |
| 中文摘要 | inxga1-xas/inp (0.39 less than or equal to x less than or equal to 0.68) strained-layer quantum wells having 20 wells with thickness of 50 angstrom in a p-i-n configuration were grown by gas source molecular beam epitaxy (gsmbe). high-resolution x-ray diffraction rocking curves show the presence of up to seven orders of sharp and intense satellite reflection, indicative of the structural perfection of the samples. low-temperature photoluminescence and low-temperature absorption spectra were used to determine the exciton transition energies as a function of strain. good agreement is achieved between exciton transition energies obtained experimentally at low temperature with those calculated using the deformation potential theory. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15151]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XL,Sun DZ,Kong MY,et al. GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N configuration[J]. journal of crystal growth,1997,175(0):1254-1258. |
| APA | Wang XL,Sun DZ,Kong MY,Hou X,&Zeng YP.(1997).GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N configuration.journal of crystal growth,175(0),1254-1258. |
| MLA | Wang XL,et al."GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N configuration".journal of crystal growth 175.0(1997):1254-1258. |
入库方式： OAI收割
来源：半导体研究所
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