Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells
文献类型：期刊论文
| 作者 | Wang XL ; Sun DZ ; Kong MY ; Hou X ; Zeng YP |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1997 |
| 卷号 | 180期号:1页码:22-26 |
| 关键词 | quantum wells GSMBE InGaAs/InP photoluminescence MOLECULAR-BEAM EPITAXY VAPOR-PHASE EPITAXY ROOM-TEMPERATURE MULTILAYERS DEFECTS DISLOCATIONS MODULATION LASERS SHIFT |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang xl chinese acad sciinst semicondpob 912beijing 100083peoples r china. |
| 中文摘要 | high-quality compressively strained in0.63ga0.37as/inp quantum wells with different well widths (1-11 nm) have been grown coherently on inp substrates using a home-made gas source molecular beam epitaxy (gsmbe) system. the indium composition in the wells of the sample was determined by means of high-resolution x-ray diffraction and its computer simulation. it is found that the exciton transition energies determined by photoluminescence (pl) at 10 k are in good agreement with those calculated using a deformation potential model. sharp and intense peaks for each well can be well resolved in the 10 k pl spectra. for wells narrower than 4 nm, the line width of the pl peaks are smaller than the theoretical values of the line-width broadening due to 1 hit interface fluctuation, showing that the interface fluctuation of our sample is within 1 ml. for wells of 7 and 9 nm, the pl peak widths are as low as 4.5 mev. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15155]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XL,Sun DZ,Kong MY,et al. Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells[J]. journal of crystal growth,1997,180(1):22-26. |
| APA | Wang XL,Sun DZ,Kong MY,Hou X,&Zeng YP.(1997).Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells.journal of crystal growth,180(1),22-26. |
| MLA | Wang XL,et al."Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells".journal of crystal growth 180.1(1997):22-26. |
入库方式： OAI收割
来源：半导体研究所
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