A theoretical model for the tilt of the GaAs/Si epilayers
文献类型：期刊论文
| 作者 | Hao MS ; Shao CL ; Soga T ; Jimbo T ; Umeno M ; Liang JW |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1997 |
| 卷号 | 178期号:3页码:276-279 |
| 关键词 | GaAs/Si tilt MISORIENTATION EPITAXY SI(001) |
| ISSN号 | 0022-0248 |
| 中文摘要 | the crystallographic tilt of the epilayers with respect to their substrates has been observed in many heteroepitaxial systems. many models have been proposed to explain this phenomenon, but none of them is suitable for the large mismatched system, such as gaas/si. here a new model is proposed for gaas/si epilayers, which can also be used in other large mismatched systems. the magnitude of the tilt calculated from this model coincide well with the experimental results. especially, this model can correctly predict the tilt direction of the gaas/si epilayers. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15177]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hao MS,Shao CL,Soga T,et al. A theoretical model for the tilt of the GaAs/Si epilayers[J]. journal of crystal growth,1997,178(3):276-279. |
| APA | Hao MS,Shao CL,Soga T,Jimbo T,Umeno M,&Liang JW.(1997).A theoretical model for the tilt of the GaAs/Si epilayers.journal of crystal growth,178(3),276-279. |
| MLA | Hao MS,et al."A theoretical model for the tilt of the GaAs/Si epilayers".journal of crystal growth 178.3(1997):276-279. |
入库方式： OAI收割
来源：半导体研究所
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