Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Cheng TS ; Foxon CT ; Ren GB ; Jeffs NJ ; Orton JW ; Novikov SV ; Xin Y ; Brown PD ; Humphreys CJ ; Halliwell M |
| 刊名 | compound semiconductors 1996
 |
| 出版日期 | 1997 |
| 期号 | 155页码:259-262 |
| 关键词 | LIGHT-EMITTING-DIODES GALLIUM NITRIDE |
| ISSN号 | 0951-3248 |
| 通讯作者 | cheng ts univ nottinghamdept physuniv pknottingham ng7 2rdengland. |
| 中文摘要 | films of gan have been grown using a modified mbe technique in which the active nitrogen is supplied from an rf plasma source. wurtzite films grown on (001) oriented gaas substrates show highly defective, ordered polycrystalline growth with a columnar structure, the (0001) planes of the layers being parallel to the (001) planes of the gaas substrate. films grown using a coincident as flux, however, have a single crystal zinc-blende growth mode. they have better structural and optical properties. to improve the properties of the wurtzite films we have studied the growth of such films on (111) oriented gaas and gap substrates. the improved structural properties of such films, assessed using x-ray and tem method, correlate with better low-temperature fl. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15181]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cheng TS,Foxon CT,Ren GB,et al. Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy[J]. compound semiconductors 1996,1997(155):259-262. |
| APA | Cheng TS.,Foxon CT.,Ren GB.,Jeffs NJ.,Orton JW.,...&Halliwell M.(1997).Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy.compound semiconductors 1996(155),259-262. |
| MLA | Cheng TS,et al."Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy".compound semiconductors 1996 .155(1997):259-262. |
入库方式： OAI收割
来源：半导体研究所
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