Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques
文献类型：期刊论文
| 作者 | Zhuang Y ; Giannini C ; Tapfer L ; Marschner T ; Stolz W |
| 刊名 | nuovo cimento della societa italiana di fisica d-condensed matter atomic molecular and chemical physics fluids plasmas biophysics
 |
| 出版日期 | 1997 |
| 卷号 | 19期号:0页码:377-383 |
| 关键词 | CORRELATED-INTERFACIAL-ROUGHNESS MOLECULAR-BEAM EPITAXY SURFACE-MORPHOLOGY GROWTH MULTILAYERS FILMS HETEROSTRUCTURES GAAS(100) INGAAS |
| ISSN号 | 0392-6737 |
| 通讯作者 | zhuang y ctr nazl ric & sviluppo matpastisstr statale 7 appia km 712i-72100 brindisiitaly. |
| 中文摘要 | in this work we investigate the lateral periodicity of symmetrically strained (gain)as/gaas/ga(pas)/gaas superlattices by means of x-ray scattering techniques. the multilayers were grown by metalorganic vapour phase epitaxy on (001)gaas substrates, which were intentionally off-oriented towards the [011]-direction. the substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. the reciprocal space maps clearly show a two-dimensional periodicity of the x-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. the distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15183]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhuang Y,Giannini C,Tapfer L,et al. Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques[J]. nuovo cimento della societa italiana di fisica d-condensed matter atomic molecular and chemical physics fluids plasmas biophysics,1997,19(0):377-383. |
| APA | Zhuang Y,Giannini C,Tapfer L,Marschner T,&Stolz W.(1997).Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques.nuovo cimento della societa italiana di fisica d-condensed matter atomic molecular and chemical physics fluids plasmas biophysics,19(0),377-383. |
| MLA | Zhuang Y,et al."Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques".nuovo cimento della societa italiana di fisica d-condensed matter atomic molecular and chemical physics fluids plasmas biophysics 19.0(1997):377-383. |
入库方式： OAI收割
来源：半导体研究所
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