Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)
文献类型：期刊论文
| 作者 | Ranke W ; Xing YR |
| 刊名 | surface science
 |
| 出版日期 | 1997 |
| 卷号 | 381期号:1页码:1-11 |
| 关键词 | adsorption kinetics low energy electron diffraction low index single crystal surfaces silicon surface structure morphology roughness and topography vicinal single crystal surfaces visible and ultraviolet photoelectron spectroscopy water SCANNING-TUNNELING-MICROSCOPY CYLINDRICAL SILICON CRYSTAL MILLER INDEX SURFACES ROOM-TEMPERATURE VICINAL SURFACES ATOMIC-STRUCTURE H2O SI(100) CHEMISORPTION LEED |
| ISSN号 | 0039-6028 |
| 通讯作者 | ranke w max planck gesellfritz haber instfaradayweg 4-6d-14195 berlingermany. |
| 中文摘要 | we present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). on all orientations, water adsorption is dissociative (oh and h) and non-destructive. on si(001) the sticking coefficient s and the saturation coverage theta(sat) are largest. on si(001) and for small miscuts in the [110]-azimuth, s is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. for (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. on (115), (113), (5,5,12) and (112), the values of s and theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. for (113) the shape of the adsorption curves theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with langmuir-like kinetics. on (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. from the corresponding values of s and theta(sat), data for structure models are deduced. (c) 1997 elsevier science b.v. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15187]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ranke W,Xing YR. Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)[J]. surface science,1997,381(1):1-11. |
| APA | Ranke W,&Xing YR.(1997).Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112).surface science,381(1),1-11. |
| MLA | Ranke W,et al."Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)".surface science 381.1(1997):1-11. |
入库方式： OAI收割
来源：半导体研究所
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