Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces
文献类型：期刊论文
| 作者 | Ranke W ; Xing YR |
| 刊名 | surface review and letters
 |
| 出版日期 | 1997 |
| 卷号 | 4期号:1页码:15-23 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY MILLER INDEX SURFACES ATOMIC-STRUCTURE ADSORPTION SILICON H2O LEED SI MODEL |
| ISSN号 | 0218-625x |
| 通讯作者 | ranke w max planck gesellfritz haber instfaradayweg 4-6d-14195 berlingermany. |
| 中文摘要 | the structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution leed and photoemission both on a spherical and on flat samples. we find that si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of baski et al. [science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 angstrom(2). adsorption measurements of water on si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ml which are related to adsorption on different sites. using these results, a modified structure model is proposed. surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15211]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ranke W,Xing YR. Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces[J]. surface review and letters,1997,4(1):15-23. |
| APA | Ranke W,&Xing YR.(1997).Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces.surface review and letters,4(1),15-23. |
| MLA | Ranke W,et al."Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces".surface review and letters 4.1(1997):15-23. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。