Properties of cubic GaN grown by MBE
文献类型：期刊论文
| 作者 | Brandt O ; Yang H ; Mullhauser JR ; Trampert A ; Ploog KH |
| 刊名 | materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 1997 |
| 卷号 | 43期号:0页码:215-221 |
| 关键词 | cubic gallium arsenide film molecular beam epitaxy photoluminescence transmission electron microscopy MOLECULAR-BEAM EPITAXY GALLIUM NITRIDE GAAS |
| ISSN号 | 0921-5107 |
| 通讯作者 | brandt o paul drude inst festkorperelekthausvogteipl 5-7d-10117 berlingermany. |
| 中文摘要 | we review our investigation of cubic gan films on (001) gaas, focusing on the structural, optical, and electrical properties of these films. cubic gan films grown epitaxially on gaas suffer from the large lattice mismatch between these two materials in that they contain extremely high densities of structural defects. surprisingly, the optical quality of these films does not seem much affected by the presence of defects, as intense photoluminescence is detected a? room temperature and above. finally, the rather high background electron concentrations in our films is shown to be a consequence of contamination with o and not to be an intrinsic property of cubic phase gan. (c) 1997 elsevier science s.a. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15223]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Brandt O,Yang H,Mullhauser JR,et al. Properties of cubic GaN grown by MBE[J]. materials science and engineering b-solid state materials for advanced technology,1997,43(0):215-221. |
| APA | Brandt O,Yang H,Mullhauser JR,Trampert A,&Ploog KH.(1997).Properties of cubic GaN grown by MBE.materials science and engineering b-solid state materials for advanced technology,43(0),215-221. |
| MLA | Brandt O,et al."Properties of cubic GaN grown by MBE".materials science and engineering b-solid state materials for advanced technology 43.0(1997):215-221. |
入库方式： OAI收割
来源：半导体研究所
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