Donor acceptor pair in molecular beam epitaxy grown GaN
文献类型：期刊论文
| 作者 | Ren GB ; Dewsnip DJ ; Lacklison DE ; Orton JW ; Cheng TS ; Foxon CT |
| 刊名 | materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 1997 |
| 卷号 | 43期号:0页码:242-245 |
| 关键词 | donor acceptor pair GaN molecular beam epitaxy photoluminescence shallow acceptor GAAS LUMINESCENCE CD |
| ISSN号 | 0921-5107 |
| 通讯作者 | ren gb acad sinicainst semicondsemicond mat sci labpob 912beijing 100083peoples r china. |
| 中文摘要 | we have recently found evidence of new donor acceptor pair (dap) luminescence in molecular beam epitaxy (mbe) grown films. a variety of nominally undoped samples have been studied by photoluminescence (pl) over a temperature range of 5-300 k. the samples show intensive luminescence al energies of 3.404-3.413 ev varying with different sample at 5 k, as well as a fairly strong (dx)-x-0 line at low temperature. we attribute the line at 3.404-3.413 ev to dap recombination which is over 0.1 ev different from the well known dap caused by me-doping in gan. the dap line shows fine structure. it even predominates in one particular sample. the peak position shifts to higher energy with temperature increasing from 5 up to 70 k, and as the excitation laser intensity increases. the data are consistent with dap luminescence involving an acceptor level of about 90 mev (presumably carbon) above the valence band edge in gan. it is much shallower than the acceptor level of 250 mev produced by the p-type dopant mg which is commonly used at present. (c) 1997 elsevier science s.a. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15225]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ren GB,Dewsnip DJ,Lacklison DE,et al. Donor acceptor pair in molecular beam epitaxy grown GaN[J]. materials science and engineering b-solid state materials for advanced technology,1997,43(0):242-245. |
| APA | Ren GB,Dewsnip DJ,Lacklison DE,Orton JW,Cheng TS,&Foxon CT.(1997).Donor acceptor pair in molecular beam epitaxy grown GaN.materials science and engineering b-solid state materials for advanced technology,43(0),242-245. |
| MLA | Ren GB,et al."Donor acceptor pair in molecular beam epitaxy grown GaN".materials science and engineering b-solid state materials for advanced technology 43.0(1997):242-245. |
入库方式： OAI收割
来源：半导体研究所
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