中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes

文献类型:期刊论文

作者Liu Y ; Xiao XR ; Zeng YP ; Yan CH ; Zheng HQ ; Sun DZ
刊名science in china series a-mathematics physics astronomy
出版日期1997
卷号40期号:5页码:540-545
关键词quantum well semiconductor electrode photocurrent quantum yield photoelectrochemistry SUPERLATTICE ELECTRODES PHOTOCURRENT SPECTROSCOPY SOLAR-CELLS
ISSN号1006-9283
通讯作者liu y acad sinicainst photog chembeijing 100101peoples r china.
中文摘要the photoelectric properties of the lattice-matched gaas/alxga1-xas quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. a new kind of structure of multiple quantum well electrode with varied well width, possessing the quantum yield three times that of gaas bulk materials, was designed and fabricated.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-11-17
源URL[http://ir.semi.ac.cn/handle/172111/15229]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liu Y,Xiao XR,Zeng YP,et al. Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes[J]. science in china series a-mathematics physics astronomy,1997,40(5):540-545.
APA Liu Y,Xiao XR,Zeng YP,Yan CH,Zheng HQ,&Sun DZ.(1997).Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes.science in china series a-mathematics physics astronomy,40(5),540-545.
MLA Liu Y,et al."Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes".science in china series a-mathematics physics astronomy 40.5(1997):540-545.

入库方式: OAI收割

来源:半导体研究所

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