Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes
文献类型:期刊论文
作者 | Liu Y ; Xiao XR ; Zeng YP ; Yan CH ; Zheng HQ ; Sun DZ |
刊名 | science in china series a-mathematics physics astronomy
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出版日期 | 1997 |
卷号 | 40期号:5页码:540-545 |
关键词 | quantum well semiconductor electrode photocurrent quantum yield photoelectrochemistry SUPERLATTICE ELECTRODES PHOTOCURRENT SPECTROSCOPY SOLAR-CELLS |
ISSN号 | 1006-9283 |
通讯作者 | liu y acad sinicainst photog chembeijing 100101peoples r china. |
中文摘要 | the photoelectric properties of the lattice-matched gaas/alxga1-xas quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. a new kind of structure of multiple quantum well electrode with varied well width, possessing the quantum yield three times that of gaas bulk materials, was designed and fabricated. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/15229] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Liu Y,Xiao XR,Zeng YP,et al. Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes[J]. science in china series a-mathematics physics astronomy,1997,40(5):540-545. |
APA | Liu Y,Xiao XR,Zeng YP,Yan CH,Zheng HQ,&Sun DZ.(1997).Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes.science in china series a-mathematics physics astronomy,40(5),540-545. |
MLA | Liu Y,et al."Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes".science in china series a-mathematics physics astronomy 40.5(1997):540-545. |
入库方式: OAI收割
来源:半导体研究所
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