中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Magnetophonon resonance in the energy relaxation of electrons in a quantum well

文献类型:期刊论文

作者Wu XG ; Peeters FM
刊名physical review b
出版日期1997
卷号55期号:15页码:9333-9335
关键词GAAS HETEROSTRUCTURE CARRIER RELAXATION PHONON SEMICONDUCTOR SCATTERING
ISSN号0163-1829
通讯作者wu xg chinese acad sciinst semicondnlsmbeijing 100083peoples r china.
中文摘要the magnetophonon resonance effect in the energy relaxation rate is studied theoretically for a quasi-two-dimensional electron gas in a semiconductor quantum well. an electron-temperature model is adopted to describe the coupled electron-phonon system. the energy relaxation time, derived from the energy relaxation rate, is found to display an oscillatory behavior as the magnetic-field strength changes, and reaches minima when the optical phonon frequency equals integer multiples of the electron cyclotron frequency. the theoretical results are compared with a recent experiment, and a qualitative agreement is found.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-11-17
源URL[http://ir.semi.ac.cn/handle/172111/15241]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Wu XG,Peeters FM. Magnetophonon resonance in the energy relaxation of electrons in a quantum well[J]. physical review b,1997,55(15):9333-9335.
APA Wu XG,&Peeters FM.(1997).Magnetophonon resonance in the energy relaxation of electrons in a quantum well.physical review b,55(15),9333-9335.
MLA Wu XG,et al."Magnetophonon resonance in the energy relaxation of electrons in a quantum well".physical review b 55.15(1997):9333-9335.

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来源:半导体研究所

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