Sulfur forming an isoelectronic center in zinc telluride thin films
文献类型：期刊论文
| 作者 | Ge WK ; Lam SB ; Sou IK ; Wang J ; Wang Y ; Li GH ; Han HX ; Wang ZP |
| 刊名 | physical review b
 |
| 出版日期 | 1997 |
| 卷号 | 55期号:15页码:10035-10039 |
| 关键词 | MOLECULAR-BEAM ZNS-TE GAAS ZNTE ALLOYS |
| ISSN号 | 0163-1829 |
| 通讯作者 | ge wk hong kong univ sci & technoldept physclear water baykowloonhong kong. |
| 中文摘要 | znte1-xsx epitaxial layers grown on gaas by molecular-beam epitaxy were studied by photoluminescence (pl) as a function of temperatures, excitation powers, and hydrostatic pressures. a sulfur-related emission peak, labeled as p-2, is identified as a deep-level emission by hydrostatic-pressure pl measurement. this indicates that sulfur atoms form isoelectronic centers in a znte matrix. the results qualitatively agree with the theoretical prediction and show experimental evidence of isoelectronic s in znte. a model is proposed to explain the emission mechanisms in the znte1-xsx system with small x values. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15243]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ge WK,Lam SB,Sou IK,et al. Sulfur forming an isoelectronic center in zinc telluride thin films[J]. physical review b,1997,55(15):10035-10039. |
| APA | Ge WK.,Lam SB.,Sou IK.,Wang J.,Wang Y.,...&Wang ZP.(1997).Sulfur forming an isoelectronic center in zinc telluride thin films.physical review b,55(15),10035-10039. |
| MLA | Ge WK,et al."Sulfur forming an isoelectronic center in zinc telluride thin films".physical review b 55.15(1997):10035-10039. |
入库方式： OAI收割
来源：半导体研究所
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