Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface
文献类型:期刊论文
作者 | Knap W ; Contreras S ; Alause H ; Skierbiszewski C ; Camassel J ; Dyakonov M ; Robert JL ; Yang J ; Chen Q ; Khan MA ; Sadowski ML ; Huant S ; Yang FH ; Goiran M ; Leotin J ; Shur MS |
刊名 | applied physics letters
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出版日期 | 1997 |
卷号 | 70期号:16页码:2123-2125 |
ISSN号 | 0003-6951 |
通讯作者 | knap w univ montpellier 2gesf-34095 montpellierfrance. |
中文摘要 | we report on high magnetic fields (up to 40 t) cyclotron resonance, quantum hall effect and shubnikov-de-hass measurements in high frequency transistors based on si-doped gan-algan heterojunctions. a simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented, we clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230 +/- 0.005 of the free electron effective mass. the increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect. (c) 1997 american institute of physics. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/15245] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Knap W,Contreras S,Alause H,et al. Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface[J]. applied physics letters,1997,70(16):2123-2125. |
APA | Knap W.,Contreras S.,Alause H.,Skierbiszewski C.,Camassel J.,...&Shur MS.(1997).Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface.applied physics letters,70(16),2123-2125. |
MLA | Knap W,et al."Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface".applied physics letters 70.16(1997):2123-2125. |
入库方式: OAI收割
来源:半导体研究所
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